TYSEMI BAP51-02

Product specification
BAP51-02
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
+0.05
0.8-0.05
Features
+
+0.1
0.6-0.1
-
Low diode capacitance
Low diode forward resistance.
0.77max
+0.05
0.1-0.02
0.07max
+0.1
1.6-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
50
V
continuous forward current
IF
50
mA
P tot
715
mW
total power dissipation
Ts = 90
storage temperature
Tstg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
Rth j-s
85
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
0.95
1.1
forward voltage
VF
IF = 50 mA
reverse voltage
VR
IR = 10
reverse current
IR
VR = 50 V
VR = 0; f = 1 MHz
0.4
diode capacitance
Cd
VR = 1 V; f = 1 MHz
diode forward resistance
rD
A
50
Unit
V
V
100
nA
0.3
0.55
pF
VR = 5 V; f = 1 MHz
0.2
0.35
IF = 0.5 mA; f = 100 MHz; note 1
5.5
9
IF = 1 mA; f = 100 MHz; note 1
3.6
6.5
IF = 10 mA; f = 100 MHz; note 1
1.5
2.5
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A5
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