TYSEMI BAP51-03

Product specification
BAP51-03
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
Low diode capacitance
+0.1
2.6-0.1
Low diode forward resistance.
1.0max
0.375
+0.05
0.1-0.02
0.475
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
continuous reverse voltage
continuous forward current
total power dissipation
Min
Max
Unit
50
V
VR
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
IF
50
mA
P tot
500
mW
T stg
-65
+150
Tj
-65
+150
R th j-s
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
forward voltage
VF
IF = 50 mA
reverse voltage
VR
IR = 10
reverse current
IR
VR = 50 V
VR = 0; f = 1 MHz
0.4
diode capacitance
Cd
VR = 1V; f = 1 MHz
diode forward resistance
rD
A
Typ
Max
Unit
0.95
1.1
V
50
V
100
nA
0.3
0.55
pF
VR = 5V; f = 1 MHz
0.2
0.35
IF = 0.5 mA; f = 100 MHz; note 1
5.5
40
IF = 1 mA; f = 100 MHz; note 1
3.6
25
IF = 10 mA; f = 100 MHz; note 1
1.5
5
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
Min
L
RL = 100
550
ns
;measured at IR = 3 mA
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A5
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1