Diodes SMD Type Silicon PIN diode BAP64-05 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Low diode capacitance 1 0.55 RF resistor for RF attenuators and switches +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage, current controlled 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low diode forward resistance +0.05 0.1-0.01 +0.1 0.97-0.1 Low series inductance 0-0.1 +0.1 0.38-0.1 For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage continuous forward current total power dissipation Ts = 90 Min Max Unit VR 175 V IF 100 mA Ptot 250 mW storage temperature Tstg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point Rth j-s 220 1.Base 2.Emitter 3.collector K/W Electrical Characteristics Ta = 25 Symbol Conditions forward voltage Parameter VF IF = 50 mA reverse leakage current VR Min Typ Max Unit 0.95 1.1 V VR = 175 V VR = 20 V diode capacitance Cd diode forward resistance rD VR = 0; f = 1 MHz 0.52 1 A VR = 1 V; f = 1 MHz 0.37 0.5 0.23 0.35 IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF = 1 mA; f = 100 MHz; note 1 10 20 IF = 10 mA; f = 100 MHz; note 1 2 3.8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 L IR = 6mA; RL = 100 series inductance A VR = 20 V; f = 1 MHz when switched from IF = 10 mA to charge carrier life time 10 LS pF 1.55 S 1.4 nH ,measured at IR = 3 mA Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking 5Kp www.kexin.com.cn 1