MMBTA93 TRANSISTOR(PNP) SOT–23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 MARKING:YW 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage Parameter -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -200 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -200 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 µA Collector cut-off current ICEO VCE=-200V, IB=0 -0.25 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1)* VCE=-10V, IC=-10mA 40 hFE(2*) VCE=-10V, IC=-1mA 25 hFE(3)* VCE=-10V, IC=-30mA 25 Collector-emitter saturation voltage VCE(sat)* IC=-20mA, IB=-2mA -0.5 V Base-emitter saturation voltage VBE(sat)* IC=-20mA, IB=-2mA -0.9 V DC current gain fT Transition frequency Cob Collector output capacitance VCE=-20V,IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz 50 MHz 8 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF