BCV47 TRANSISTOR (NPN) SOT–23 FEATURES High Collector Current High Current Gain MARKING:FG 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC=100µA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 10 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100µA 2000 hFE(2) VCE=5V, IC=10mA 4000 hFE(3) VCE=5V, IC=100mA 10000 hFE(4) VCE=5V, IC=0.5A 2000 DC current gain conditions Min Typ Max Unit Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=0.1mA 1 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=0.1mA 1.5 V Transition frequency Collector output capacitance fT Cob VCE=5V,IC=50mA, f=100MHz 170 MHz VCB=10V, IE=0, f=1MHz 3.5 pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５