FMMT449 TRANSISTOR (NPN) SOT–23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Min hFE(1) * VCE=2V, IC=50mA 70 hFE(2) * VCE=2V, IC=500mA 100 hFE(3) * VCE=2V, IC=1A 80 hFE(4) * VCE=2V, IC=2A 40 Typ Max 300 IC=1A, IB=100mA 0.5 V VCE(sat)2* IC=2A, IB=200mA 1 V VBE(sat)* IC=1A, IB=100mA 1.25 V 1 V VBE* Transition frequency fT Cob VCE=2V, IC=1A VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz 150 MHz 15 *Pulse test １ JinYu semiconductor Unit VCE(sat)1* Base-emitter voltage Collector output capacitance conditions www.htsemi.com Ｄａｔｅ：２０１１／０５ pF