2SC4177 TRANSISTOR (NPN) FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS SOT–323 General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE* VCE=6V, IC=1mA 90 600 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V 0.65 V Base-emitter voltage VBE VCE=6V, IC=1mA Transition frequency fT VCE=6V, IC=10mA Cob Collector output capacitance 0.55 VCB=6V, IE=0, f=1MHz 250 MHz 3 pF *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK L4 L5 L6 L7 RANGE 90–180 135–270 200–400 300–600 MARKING L4 L5 L6 L7 １ JinYu semiconductor www.htsemi.com