FMMT593 TRANSISTOR (PNP) SOT–23 FEATURES Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-100V, IE=0 -0.1 µA Collector cut-off current ICES VCES=-100V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=-5V, IC=-1mA 100 hFE(2) * VCE=-5V, IC=-250mA 100 hFE(3) * VCE=-5V, IC=-0.5A 100 hFE(4) * VCE=-5V, IC=-1A 50 VCE(sat)1* IC=-250mA, IB=-25mA -0.2 V VCE(sat)2* IC=-500mA, IB=-50mA -0.3 V VBE(sat)* IC=-500mA, IB=-50mA -1.1 V -1 V Base-emitter voltage VBE* Transition frequency fT Collector output capacitance 300 Cob VCE=-5V, IC=-1mA VCE=-10V,IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz 50 MHz 5 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF