SD103AX SCHOTTKY BARRIER DIODE SOD-523 FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance ___ MARKING: S 4 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 40 V RMS Reverse Voltage 28 V Forward Continuous Current 350 mA VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR VR(RMS) IO DC Blocking Voltage IFRM Repetitive Peak Forward Current @t≤1s 1 IFSM Non-Repetitive Peak Forward Surge [email protected] Half Sine Wave 15 PD Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 667 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA A ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time Symbol V(BR) IR VF Ctot trr Test conditions IR=100μA Min Typ Max 40 Unit V VR=30V 5 VR=20V 2 VR=10V 1 IF=1mA 0.27 IF=5mA 0.32 IF=20mA 0.37 IF=200mA 0.6 μA V VR=0V,f=1MHz 50 pF IF= IR=200mA, Irr=0.1×IR, RL=100Ω 10 ns １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５