HUASHAN H558

PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
H558
█ APPLICATIONS
SWITCHING AND AMPLIFIER
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………500mW
1―Collector，C
2―Base，B
3―Emitter，E
VCBO ——Collector-Base Voltage………………………………-30V
VCEO——Collector-Emitter Voltage……………………………-30V
VE B O ——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-100mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　Typ　Max　Unit Test Conditions BVCBO
Collector-Base Breakdown Voltage
－３０　Ｖ　IC=-100μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
－３０　Ｖ　IC=-10mA, IB=0　BVEBO
Emitter-Base Breakdown Voltage
－５　Ｖ　IE=-100μA，IC=0
－１５　１１０　８００　ICBO
Collector Cut-off Current
HFE　DC Current Gain　ｎＡ　VCB=-30V, IE=0
VCE=-5V, IC=-2mA　VCE(sat1)　Collector- Emitter Saturation Voltage　－９０　－３００　ｍＶ　IC=-10mA, IB=-0.5mA　VCE(sat2)
－２５０　－６５０　ｍＶ　IC=-100mA, IB=-5mA
VBE(sat1)　Base-Emitter Saturation Voltage　－０．７　Ｖ　IC=-10mA, IB=-0.5mA　VBE(sat2)
－０．９　Ｖ　IC=-100mA, IB=-5mA
VBE(ON1)　Base-Emitter On Voltage　－６６０　－７５０　ｍＶ　VCE=-5V, IC=-2mA　VBE(ON2)
fT
Cob
Current Gain-Bandwidth Product
Output Capacitance
－８００　ｍＶ　VCE=-5V, IC=-10mA
１５０　ＭＨｚ　VCE=-5V,IC=-10mA,f=1MHz
６　ｐＦ　VCB=-10V, IE=0，f=1MHz
█ hFE Classification
A
B
C
110—220
200—450
420—800
Shantou Huashan Electronic Devices Co.,Ltd.
H558