Inchange Semiconductor Product Specification 2N5743 2N5744 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol l Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5743 VCBO Collector-base voltage -60 Open base 2N5744 VEBO V -100 2N5743 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2N5744 VCEO VALUE V -100 Open collector -5 V -20 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5743 2N5744 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5743 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB=0 2N5744 V -100 VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-4A -3.0 V Base-emitter saturation voltage IC=-10A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-10A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ -0.5 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-10A ; VCE=-5V 20 hFE-2 DC current gain IC=-20A ; VCE=-5V 10 Transition frequency IC=-1A ; VCE=-10V 10 VBEsat fT 2 80 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3