Inchange Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type MJE3055T ・DC current gain -hFE = 20–70 @ IC = -4 Adc ・Collector–emitter saturation voltage VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc APPLICATIONS ・Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -6 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.67 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -1.1 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A -8.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.8 V ICEO Collector cut-off current VCE=-30V; IB=0 -0.7 mA ICEX Collector cut-off current VCE=-70V; VBE(off)=-1.5V TC=150℃ -1.0 -5.0 mA ICBO Collector cut-off current VCB=-70V; IE=0 TC=150℃ -1.0 -10 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5.0 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 hFE-2 DC current gain IC=-10A ; VCE=-4V 5.0 Transition frequency IC=-0.5A ; VCE=-10V 2.0 fT CONDITIONS 2 MIN TYP. MAX -60 UNIT V 100 MHz Inchange Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3