Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ・With TO-220 package ・2N6102 type with short pin APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 电半 Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO PARAMETER Collector-base voltage CONDITIONS N O C I Open emitter M E S NG R O T DUC VALUE UNIT 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 8 V 16 A 75 W A H C IN IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.67 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=5A 3.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=15A ; VCE=4V 3.5 V ICBO Collector cut-off current VCB=Rated VCBO;IE=0 TC=150℃ 0.5 2.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE-1 hFE-2 fT 体 导 电半 固 N O C EMI DC current gain S G N HA DC current gain INC Transition frequency IC=8A ; VCE=4V 45 UNIT R O T DUC 15 IC=15A ; VCE=4V 5 IC=1A ; VCE=10V 0.8 2 V 80 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3