Product Specification www.jmnic.com 2N5741 2N5742 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Fast switching speed APPLICATIONS ・For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5741 VCBO Collector-base voltage 60 Open base 2N5742 VEBO V 100 2N5741 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N5742 VCEO VALUE V 100 Open collector 5 V 20 A 65 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5741 2N5742 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5741 MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 2N5742 V 100 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=4A 3.0 V Base-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=10A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=5V 20 hFE-2 DC current gain IC=20A ; VCE=5V 10 Transition frequency IC=1A ; VCE=10V 10 VBEsat fT JMnic 80 MHz Product Specification www.jmnic.com 2N5741 2N5742 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic