Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -2.0 A ICM Collector current-Peak -4.0 A IB Base current -1.0 A PT Total power dissipation B Ta=25℃ 1.5 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-1.0A ,IB=-0.1A,L=1mH VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-5V 40 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 -100 B UNIT V 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=-1.0A IB1=- IB2=-0.1A RL=50Ω;VCC≈50V hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors 4 Inchange Semiconductor Product Specification 2SA1008 Silicon PNP Power Transistors 5