ISC 2SA1008

Inchange Semiconductor
Product Specification
2SA1008
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2331
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC/DC converters
·High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-2.0
A
ICM
Collector current-Peak
-4.0
A
IB
Base current
-1.0
A
PT
Total power dissipation
B
Ta=25℃
1.5
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1008
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-1.0A ,IB=-0.1A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40
-100
B
UNIT
V
200
Switching times resistive load
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-1.0A IB1=- IB2=-0.1A
RL=50Ω;VCC≈50V
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SA1008
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SA1008
Silicon PNP Power Transistors
4
Inchange Semiconductor
Product Specification
2SA1008
Silicon PNP Power Transistors
5