Inchange Semiconductor Product Specification 2SD1308 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB974 APPLICATIONS ·For audio frequency power amplifier and low speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 0.5 A PT Total power dissipation TC=25℃ 30 Ta=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1308 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=2mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1.0 μA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 2000 hFE-2 DC current gain IC=4A ; VCE=2V 500 100 UNIT V 20000 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A; IB1=-IB2=2mA RL=25Ω; VCC≈50V hFE-1 classifications M L K 2000-5000 4000-10000 8000-20000 2 1.0 μs 3.5 μs 1.2 μs Inchange Semiconductor Product Specification 2SD1308 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3