Inchange Semiconductor Product Specification 2SA1329 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3346 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A IB Base current -2 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1329 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.3A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.3A -0.9 -1.2 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-6A ; VCE=-1V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 400 pF fT Transition frequency IC=-1A ; VCE=-5V 50 MHz 0.3 μs 1.0 μs 0.5 μs -80 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=- IB2=-0.3A RL=5Ω;VCC=-30V hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SA1329 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SA1329 Silicon PNP Power Transistors 4