Inchange Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type KSA1010 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC/DC converters ・High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 15 A IB Base current 3.5 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX 100 UNIT Base-emitter sustaining voltage IC=5.0A ,IB=0.5A,L=1mH V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 240 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times resistive load ton ts tf Turn-on time IC=5A IB1=- IB2=0.5A RL=10Ω;VCC≈50V Storage time Fall time hFE-2 Classifications R O Y 40-80 70-140 120-240 2 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification KSC2334 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4