ISC 2SA1129

Inchange Semiconductor
Product Specification
2SA1129
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
·Complement to type 2SC2654
APPLICATIONS
·For low-frequency power amplifiers
and mid-speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-7
A
ICM
Collector current-peak
-15
A
IB
Base current
-3.5
A
B
PT
TC=25℃
40
Ta=25℃
1.5
Collector power dissipation
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1129
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-3A; IB=-0.1A
-0.3
V
VCEsat -2
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.6
V
VBEsat-1
Base-emitter saturation voltage
IC=-3A; IB=-0.1A
-1.5
V
VBEsat -2
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-3A ; VCE=-1V
40
hFE-2
DC current gain
IC=-5A ; VCE=-1V
20
-30
UNIT
V
200
Switching times resistive load
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-5.0A IB1=- IB2=-0.5A
RL=4Ω;VCC=-20V
Fall time
hFE-1 Classifications
M
L
K
40-80
60-120
100-200
2
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SA1129
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3