Inchange Semiconductor Product Specification 2SA1129 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity ·Complement to type 2SC2654 APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A ICM Collector current-peak -15 A IB Base current -3.5 A B PT TC=25℃ 40 Ta=25℃ 1.5 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1129 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.1A -0.3 V VCEsat -2 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V VBEsat-1 Base-emitter saturation voltage IC=-3A; IB=-0.1A -1.5 V VBEsat -2 Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-3A ; VCE=-1V 40 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 -30 UNIT V 200 Switching times resistive load ton Turn-on time tstg Storage time tf IC=-5.0A IB1=- IB2=-0.5A RL=4Ω;VCC=-20V Fall time hFE-1 Classifications M L K 40-80 60-120 100-200 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SA1129 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3