Inchange Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA (safe operating area) ・Complement to type 2SD2394 PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -6 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 50 pF fT Transition frequency IC=-0.5A ; VCE=-5V 15 MHz CONDITIONS hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 Inchange Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3