ISC 2SB953

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB953
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= -0.6V(Max)@IC= -5A
·High Speed Switching
·Complement to Type 2SD1444
APPLICATIONS
·Designed for low-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-12
A
Collector Power Dissipation
@ Ta=25℃
2
PC
TJ
Tstg
W
Collector Power Dissipation
@ TC=25℃
30
Junction Temperature
150
℃
-55~150
℃
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SB953
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.16A
-0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -5A; IB= -0.16A
-1.5
V
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
-50
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-50
μA
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
45
hFE-2
DC Current Gain
IC= -2A; VCE= -2V
90
COB
Collector Output Capacitance
IE= 0; VCB= -10V; ftest=1MHz
140
pF
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -10V; ftest=10MHz
150
MHz
0.1
μs
0.5
μs
0.1
μs
fT
CONDITIONS
MIN
TYP.
MAX
-20
UNIT
V
B
B
260
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
‹
IC= -2A, IB1= -IB2= -66mA
Fall Time
hFE-1 Classifications
Q
P
90-180
130-260
isc Website:www.iscsemi.cn
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