isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 60 V 50 V 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3709 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain COB Output Capacitance m e s isc fT ton Turn-on Time tstg Storage Time 70-140 120-240 isc Website：www.iscsemi.cn 50 V 70 n c . i UNIT 240 40 180 pF IC= 1A; VCE= 5V 90 MHz 0.2 μs 1.0 μs 0.2 μs IB1= -IB2= 0.3A, RL= 5Ω; VCC≈ 30V, hFE-1 Classifications Y MAX IE= 0; VCB= 10V; ftest= 1MHz Fall Time O TYP. B w. w w MIN B IC= 6A; VCE= 1V Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 2