isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications. ·Power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w -100 V -80 V -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous -1 A Collector Power Dissipation @ Ta=25℃ 2 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.4 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain COB Output Capacitance fT w w ton Turn-on Time tstg Storage Time 70-140 120-240 isc Website：www.iscsemi.cn MAX -80 n c . i m e IC= -4A; VCE= -1V UNIT V 70 240 30 IE= 0; VCB= -10V; f= 1MHz 250 pF IC= -1A; VCE= -4V 10 MHz 0.4 μs 2.5 μs 0.5 μs IC= -3.0A ,IB1= -IB2= -0.3A, VCC= -30V; RL= 10Ω hFE-1 Classifications Y TYP. B Fall Time O MIN B s c s i . w Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 2