isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD843 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous 7 A IC Collector Power Dissipation @ Ta=25℃ 1.5 PC TJ Tstg W Total Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD843 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.4 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A; VCE= 1V 70 hFE-2 DC Current Gain IC= 4A; VCE= 1V 30 Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V 10 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 250 pF 0.4 μs 2.5 μs 0.5 μs fT COB CONDITIONS MIN TYP. MAX 80 UNIT V B B 240 Switching times ton Turn-on Time tstg Storage Time tf RL= 10Ω, VCC= 30V IB1= -IB2= 0.3A Fall Time hFE-1 Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2