isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous -2 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A -1.2 V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -1A ; VCE= -1V 70 hFE-2 DC Current Gain IC= -6A ; VCE= -1V 40 Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 70 MHz Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 320 pF 0.3 μs 1.0 μs 0.5 μs fT COB CONDITIONS MIN TYP. MAX -50 UNIT V B B 240 Switching Times ton Turn-on Time tstg Storage Time tf IC= -3A ,RL= 10Ω, IB1= -IB2= -0.15A,VCC= -30V Fall Time hFE-1 Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2