ISC 2SC1783

Inchange Semiconductor
Product Specification
2SC1783
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
·High speed ,high current
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
10
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1783
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=180V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=3A ; VCE=4V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
165
pF
Transition frequency
IC=1A ; VCE=10V
10
MHz
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
30
Inchange Semiconductor
Product Specification
2SC1783
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3