Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD424 ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -4 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-90V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz fT Transition frequency IC=-2A ; VCE=-5V 2 MIN TYP. MAX -180 UNIT V 40 140 450 pF 6 MHz Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3