Inchange Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector -emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings(Ta=25℃) CONDITIONS VALUE UNIT Open emitter -80 V Open base -80 V Open collector -7 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA ICBO Collector cut-off current IEBO hFE fT COB CONDITIONS MIN TYP. UNIT -1.5 V VCB=-80V; IE=0 -100 μA Emitter cut-off current VEB=-5V; IC=0 -3.0 mA DC current gain IC=-2A ; VCE=-3V 体 半导 Transition frequency IC=-0.5A ; VCE=-5V Output capacitance IE=0 ; VCB=-10V;f=1MHz 固电 -1.0 MAX 1000 R O T UC D N O IC M E S GE N A H INC 2 10000 12 MHz 45 pF Inchange Semiconductor Product Specification 2SB1342 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3