ISC 2SC1454

Inchange Semiconductor
Product Specification
2SC1454
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage:VCEO=250V(min)
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
7
V
4
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1454
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=12V
fT
CONDITIONS
2
MIN
TYP.
MAX
250
UNIT
V
20
10
MHz
Inchange Semiconductor
Product Specification
2SC1454
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3