Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector -emitter voltage Open base 100 V Emitter-base voltage Open collector 5 V 5 A 0.5 A 30 W A H C IN IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V VBE Base-emitter voltage IC=1A; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=4A ; VCE=5V 20 Transition frequency IC=1A; VCE=5V fT COB 体 导 半 Collector output capacitance 固电 40-80 CHA O Y 70-140 120-240 IN 2 MIN TYP. MAX 100 UNIT V 240 R O T UC D N O IC f=1MHz ; VCB=10V;IE=0 EM S E NG hFE-1 Classifications R CONDITIONS 12 MHz 100 pF Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC