ISC BU903

Inchange Semiconductor
Product Specification
BU903
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage
・High speed switching
APPLICATIONS
・For color TV horizontal deflection circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1350
V
VCEO
Collector-emitter voltage
Open base
550
V
VEBO
Emitter-base voltage
Open collector
7
V
6
A
125
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
BU903
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0;
550
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=3.2A;IB=0.8A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=3.2A;IB=0.8A
1.3
V
ICBO
Collector cut-off current
VCB=1300V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V;IC=0
0.1
mA
hFE
DC current gain
IC=1.5A ; VCE=5V
2
MIN
8
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
BU903
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3