ISC BUH313

Inchange Semiconductor
Product Specification
BUH313
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
APPLICATIONS
・Horizontal deflection for color TV
・Switch mode power supplies.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1300
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
tp<5ms
10
A
Ptot
Total power dissipation
TC=25℃
50
W
150
℃
-65~150
℃
Tj
Tstg
Operating junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
BUH313
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.75A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.75A
1.3
V
ICES
Collector cut-off current
VCE=1300V; VBE=0
0.2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
5.5
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.8
℃/W
Inchange Semiconductor
Product Specification
BUH313
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3