Inchange Semiconductor Product Specification 2SC4336 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For use in switching power supplies ,DC/DC converters,motor drivers,solenoid drivers,etc PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A IB Base current(DC) 6 A PT Total power dissipation TC=25℃ 30 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4336 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=5.0A , IB=0.6A;L=1mH VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.3A 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=0.4A 0.5 V VBEsat-1 Base-emitter saturation voltage IC=6A ;IB=0.3A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA ICEX Collector cut-off current VCE=100V; VBE(off)=-1.5V Ta=125℃ 10 1.0 μA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=2V 100 hFE-2 DC current gain IC=2A ; VCE=2V 100 hFE-3 DC current gain IC=6A ; VCE=2V 60 COB Collector capacitance IE=0; VCB=10V; f=1MHz 120 pF fT Transition frequency IC=0.5A; VCE=10V 150 MHz 100 UNIT V 400 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A ;IB1=-IB2=0.3A VCC≈50V;RL=8.3Ω hFE-2 Classifications M L N 100-200 150-300 200-400 2 0.3 μs 1.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4336 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3