ISC 2SA1443

Inchange Semiconductor
Product Specification
2SA1443
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·Fast switching speed
·High DC current gain
APPLICATIONS
·High speed power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-10
A
ICM
Collector current-peak
-20
A
IB
Base current
-5
A
PC
Collector power dissipation
B
TC=25℃
30
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SA1443
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-6A , IB=-0.6A;L=1mH
VCEsat-1
Collector-emitter saturation voltage
IC=-6A, IB=-0.3A
-0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=-8A, IB=-0.4A
-0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=-6A, IB=-0.3A
-1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=-8A, IB=-0.4A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V, IE=0
-10
μA
ICEX
Collector cut-off current
VCE=-60V,VBE=1.5V
Ta=125℃
-10
-1.0
μA
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
100
hFE-2
DC current gain
IC=-2A ; VCE=-2V
100
hFE-3
DC current gain
IC=-6A ; VCE=-2V
60
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
230
pF
fT
Transition frequency
IC=-1A ; VCE=-10V
80
MHz
-60
UNIT
V
400
Switching times
ton
‹
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A ; RL=8.3Ω
IB1=- IB2=-0.3A
VCC≈-50V
hFE-2 Classifications
M
L
K
100-200
150-300
200-400
2
0.3
μs
1.5
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SA1443
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3