Inchange Semiconductor Product Specification 2SA1443 Silicon PNP Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Fast switching speed ·High DC current gain APPLICATIONS ·High speed power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -10 A ICM Collector current-peak -20 A IB Base current -5 A PC Collector power dissipation B TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1443 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-6A , IB=-0.6A;L=1mH VCEsat-1 Collector-emitter saturation voltage IC=-6A, IB=-0.3A -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-8A, IB=-0.4A -0.5 V VBEsat-1 Base-emitter saturation voltage IC=-6A, IB=-0.3A -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-8A, IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-60V, IE=0 -10 μA ICEX Collector cut-off current VCE=-60V,VBE=1.5V Ta=125℃ -10 -1.0 μA mA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 100 hFE-2 DC current gain IC=-2A ; VCE=-2V 100 hFE-3 DC current gain IC=-6A ; VCE=-2V 60 Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 230 pF fT Transition frequency IC=-1A ; VCE=-10V 80 MHz -60 UNIT V 400 Switching times ton Turn-on time ts Storage time tf Fall time IC=-6A ; RL=8.3Ω IB1=- IB2=-0.3A VCC≈-50V hFE-2 Classifications M L K 100-200 150-300 200-400 2 0.3 μs 1.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SA1443 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3