SavantIC Semiconductor Product Specification 2SA1646 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V -10 A -20 A -6 A IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation PW0300µs, duty cycle010% Ta=25 1.5 W TC=25 40 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SA1646 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat-1 Collector-emitter saturation voltage VCEsat -2 CONDITIONS MIN TYP. MAX UNIT IC=-6A; IB=-0.3A -0.3 V Collector-emitter saturation voltage IC=-8A; IB=-0.4A -0.5 V VBE sat -1 Base-emitter saturation voltage IC=-6A; IB=-0.3A -1.2 V VBE sat -2 Base-emitter saturation voltage IC=-8A; IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 100 hFE-2 DC current gain IC=-2A ; VCE=-2V 100 hFE-3 DC current gain IC=-6A ; VCE=-2V 60 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-0.5A ; VCE=-10V 150 MHz 0.3 µs 1.5 µs 0.4 µs 400 Switching times ton Turn-on time tstg Storage time tf C=-6A ; VCC=-50V IB1=-IB2=-0.3A;RL=8.3A Fall time hFE-2 Classifications M L K 100-200 150-300 200-400 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA1646