ISC 2SB1071A

Inchange Semiconductor
Product Specification
2SB1071 2SB1071A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・High speed switching
APPLICATIONS
・For low voltage switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
体
半导
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
VCBO
PARAMETER
Collector-base voltage
Open emitter
M
E
S
GE
VEBO
N
A
H
INC
Collector -emitter voltage
D
N
O
IC
2SB1071
2SB1071A
VCEO
Emitter-base voltage
R
O
T
UC
CONDITIONS
2SB1071
VALUE
-40
Open collector
V
-50
-20
Open base
2SB1071A
UNIT
V
-40
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1071 2SB1071A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB1071
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-20
IC=-10mA ,IB=0
2SB1071A
V
-40
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-1A ; VCE=-2V
60
fT
导体
半
电
固
Transition frequency
Switching times
Turn-on time
tstg
Storage time
tf
‹
IC=-2A; IB1=-IB2=-0.2A
Fall time
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
ton
IC=-0.5A ; VCE=-5V
2
260
150
MHz
0.3
μs
0.4
μs
0.1
μs
Inchange Semiconductor
Product Specification
2SB1071 2SB1071A
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3