isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4603R DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4603R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 1.0 μs 4.0 μs 0.8 μs B B TYP. MAX UNIT 10 Switching times ton Turn-on Time tstg Storage Time tf IC= 2A, IB1= 0.4A; IB2= -0.8A; RL= 150Ω; PW= 20μs; Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2