isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2650 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 5V 1.0 μs 2.5 μs 1.0 μs B B 10 Switching Times tr tstg tf Rise Time Storage Time IC= 5A; IB1= -IB2= 0.5A; RL= 40Ω; VCC= 200V; Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn 2