isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4296 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4296 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.3 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 6A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 85 pF Current-Gain—Bandwidth Product IE= -0.7A; VCE= 12V 10 MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V B B 10 30 Switching Times ton Turn-On Time tstg Storage Time tf IC= 6A; IB1= 0.6A; IB2= -1.2A; VCC= 200V; RL= 33Ω Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.5 μs