isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage VALUE UNIT 500 V 400 V 10 V w w IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4275 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.2 V ICBO Collector Cutoff Current VCB= 450V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain m e s isc 0.1 Switching times Turn-on Time tstg Storage Time tf B . w w w ton B VEB= 10V; IC= 0 IC= 1A ; VCE= 5V IC= 5A , IB1= 0.5A; IB2= -1A RL= 30Ω; PW=20μs; Duty Cycle≤2% Fall Time isc Website：www.iscsemi.cn 2 n c . i 25 65 1.0 μs 2.5 μs 0.5 μs