ISC 2SC4806

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4806
DESCRIPTION
·High Breakdown Voltage: VCBO= 1700V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching power supply output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
2.5
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4806
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3.5A; IB= 1A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3.5A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1700V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3.5A; VCE= 5V
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
COB
CONDITIONS
B
MIN
TYP.
MAX
600
UNIT
V
8
3.5
7.5
3
MHz
240
pF
Switching Times; Resistive Load
tstg
Storage Time
3.0
μs
0.2
μs
IC= 3.5A; IB1= 0.7A; IB2= -1.4A;
RL= 56Ω
tf
Fall Time
isc Website:www.iscsemi.cn
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