isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB925 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB925 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.16A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.16A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -2A; VCE= -2V 60 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 140 pF Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 150 MHz 0.1 μs 0.5 μs 0.1 μs fT CONDITIONS MIN TYP. MAX -20 UNIT V B B 260 Switching times ton Turn-on Time tstg Storage Time tf VCC= -20V;IC= -2A; IB1= -IB2= -66mA Fall Time hFE-2 Classifications R Q P 60-120 90-180 130-260 isc Website：www.iscsemi.cn 2