ISC 2SC4963

Inchange Semiconductor
Product Specification
2SC4963
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High breakdown voltage
・High speed switching
・Built-in damper diode
APPLICATIONS
・Color TV horizontal deflection output
・Color display horizontal deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
5
V
8
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4963
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=7A ; IB=1.4A
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=7A ; IB=1.4A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
250
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=7A ; VCE=5V
5
2
MIN
TYP.
MAX
800
UNIT
V
Inchange Semiconductor
Product Specification
2SC4963
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3