Inchange Semiconductor Product Specification 2SC4589 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V Collector current 10 A Collector surge current 20 A IB Base current 0.6 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ IC IC(surge) TC=25℃ Inchange Semiconductor Product Specification 2SC4589 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCE(sat) Collector-emitter saturation voltage IC=8A; IB=1.6 A 5.0 V VBE(sat) Base-emitter saturation voltage IC=8A; IB=1.6 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 500 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=5V Fall time ICP=7A; IB1=1.4A tf CONDITIONS 2 MIN TYP. MAX UNIT 800 V 5 V 8 38 0.2 0.5 μs Inchange Semiconductor Product Specification 2SC4589 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3