Inchange Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output ·High-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4.5 A ICM Collector current-peak 10 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 200 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 60 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A ; IB=0.4A VBEsat Base-emitter saturation voltage ICBO 1.0 V IC=4A ; IB=0.4A 1.5 V Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 30 hFE-2 DC current gain IC=4A ; VCE=5V 25 fT Transition frequency IC=1A ; VCE=5V 10 tf Fall time VCC=50V;IC=5A;IB1=-IB2=500mA 0.2 2 0.5 160 MHz 0.5 μs Inchange Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors 4