isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) B APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse 8 A Base Current-Continuous 1 A Total Power Dissipation @TC=25℃ 20 IB B PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4881 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 125mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 125mA 1.3 V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 μA hFE-1 DC Current Gain IC= 1A ; VCE= 1V 100 hFE-2 DC Current Gain IC= 2.5A ; VCE= 1V 60 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 45 pF Current-Gain—Bandwidth Product IC= 1A ; VCE= 4V 100 MHz 0.1 μs 0.8 μs 0.1 μs fT CONDITIONS MIN TYP. MAX 50 UNIT V 320 Switching times ton Turn-on Time tstg Storage Time tf RL= 12Ω,IB1= -IB2= 125mA, VCC= 30V Fall Time isc Website：www.iscsemi.cn 2