isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak 13 A IBP Base Current-Peak 3.5 A Collector Power Dissipation @ Ta= 25℃ 2.5 PC TJ Tstg W Collector Power Dissipation @ TC= 25℃ 65 Junction Temperature 130 ℃ -55~130 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1440 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 2.5A; VCE= 10V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V C-E Diode Forward Voltage IF= 4A fT VECF ts Storage Time 5 UNIT V 4 15 2 MHz 2.2 V 9.0 μs 0.8 μs IC= 2.5A, IBend= 0.8A, Lleak= 5μH tf Fall Time isc Website：www.iscsemi.cn 2