ISC KSD5056

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSD5056
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color monitor horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Peak
20
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSD5056
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
10
μA
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
40
130
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
8
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
3
VECF
C-E Diode Forward Voltage
IF= 5A
2.0
V
Fall Time
IC= 4A , IB1= 0.8A ; IB2= -1.6A
0.3
μs
tf
isc Website:www.iscsemi.cn
800
UNIT
B
B
2
V