isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD5056 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 20 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD5056 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 3 VECF C-E Diode Forward Voltage IF= 5A 2.0 V Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 μs tf isc Website：www.iscsemi.cn 800 UNIT B B 2 V