isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION ·High Breakdown Voltage：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1700 V 1700 V 7 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A Base Current- Continuous 3 A Collector Power Dissipation @ Ta=25℃ 3 IB B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5517 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 4.5A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V fT VECF Switching Times tstg tf w Storage Time Fall Time m e s isc . w w C-E Diode Forward Voltage isc Website：www.iscsemi.cn IF= 4.5A 7 UNIT V 5 n c . i 9 3 MHz 2.0 V 5.0 μs 0.5 μs IC= 4.5A; IB1= 0.9A; IB2= -1.8A 2