Inchange Semiconductor Product Specification 2SD1433 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 7 A 80 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1433 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-emitter saturation voltage VBE(sat) MAX UNIT IC=6A; IB=1.2A 5.0 V Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V fT Transition freuqency IC=0.1A ; VCE=10V COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz Fall time IC=6A;IB1=1.2A tf CONDITIONS 2 MIN TYP. 8 3 MHz 165 pF 1.0 μs Inchange Semiconductor Product Specification 2SD1433 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3